|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
AP4407GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S S S -30V 14m -10.7A SO-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 25 -10.7 -8.6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 201125031 AP4407GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 Typ. -0.015 Max. Units 14 20 -3 -1 -25 100 46 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o 2 VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-10.7A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz 13 29 6 14 15 12 100 70 500 370 Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 2600 4100 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-10.7A, VGS=0V IS=-10.7A, VGS=0V, dI/dt=100A/s Min. - Typ. 31 25 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad. AP4407GM 44 40 40 T A =25 C o 36 32 -ID , Drain Current (A) 28 -ID , Drain Current (A) -10V -5.0V -4.5V -4.0V 36 T A =150 o C 32 28 -10V -5.0V -4.5V -4.0V 24 24 20 20 16 16 V G =-3.0V 12 12 V G =-3.0V 8 4 8 4 0 0 0 1 2 3 0 1 1 2 2 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 16 1.80 I D =-10A T A =25 C Normalized R DS(ON) 14 1.60 o I D =-10A V GS = -10V 1.40 RDS(ON) (m ) 1.20 12 1.00 0.80 10 0.60 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100.00 10.00 2 T j =25 o C -IS(A) 1.00 -VGS(th) (V) 1 0 -50 T j =150 o C 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4407GM f=1.0MHz 14 10000 12 I D =-10.7A V DS =-24V Ciss C (pF) -VGS , Gate to Source Voltage (V) 10 8 1000 6 Coss 4 Crss 2 0 100 0 20 40 60 80 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 10 Normalized Thermal Response (Rthja) DUTY=0.5 0.2 1ms 1 0.1 0.1 0.05 -ID (A) 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125/W 0.1 T A =25 o C Single Pulse 1s 10s DC 10 100 0.01 0.001 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
Price & Availability of AP4407GM |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |