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 AP4407GM
Pb Free Plating Product
Advanced Power Electronics Corp.
Simple Drive Requirement Low On-resistance Fast Switching Characteristic
D D D D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
G S S S
-30V 14m -10.7A
SO-8
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -30 25 -10.7 -8.6 -50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit /W
Data and specifications subject to change without notice
201125031
AP4407GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 Typ. -0.015
Max. Units 14 20 -3 -1 -25 100 46 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
2
VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-10.7A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz
13 29 6 14 15 12 100 70 500 370
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
2600 4100
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=-10.7A, VGS=0V IS=-10.7A, VGS=0V, dI/dt=100A/s
Min. -
Typ. 31 25
Max. Units -1.2 V ns nC
trr
Qrr
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad.
AP4407GM
44 40
40
T A =25 C
o
36
32
-ID , Drain Current (A)
28
-ID , Drain Current (A)
-10V -5.0V -4.5V -4.0V
36
T A =150 o C
32
28
-10V -5.0V -4.5V -4.0V
24
24
20
20
16
16
V G =-3.0V
12
12
V G =-3.0V
8 4
8
4
0
0
0
1
2
3
0
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.80
I D =-10A T A =25 C Normalized R DS(ON)
14
1.60
o
I D =-10A V GS = -10V
1.40
RDS(ON) (m )
1.20
12
1.00
0.80
10
0.60 3 5 7 9 11 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
3
100.00
10.00 2
T j =25 o C
-IS(A)
1.00
-VGS(th) (V)
1 0 -50
T j =150 o C
0.10
0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
0
50
100
150
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP4407GM
f=1.0MHz
14
10000
12
I D =-10.7A V DS =-24V Ciss C (pF)
-VGS , Gate to Source Voltage (V)
10
8
1000
6
Coss
4
Crss
2
0
100
0
20
40
60
80
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
Normalized Thermal Response (Rthja)
DUTY=0.5
0.2
1ms
1
0.1
0.1
0.05
-ID (A)
10ms 100ms
0.02 0.01
PDM
0.01
Single Pulse
t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125/W
0.1
T A =25 o C Single Pulse
1s 10s DC
10 100
0.01
0.001
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG -4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform


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